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Memory reconfiguration for system-on-chip yield improvement

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Артикул: 472931.0002.99.0172
Vrezh, S. Memory reconfiguration for system-on-chip yield improvement / S. Vrezh. - Текст : электронный // Интернет-журнал "Науковедение". - 2014. - №2 (21). - URL: https://znanium.com/catalog/product/519486 (дата обращения: 28.11.2024)
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Интернет-журнал «НАУКОВЕДЕНИЕ»
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Институт Государственного управления, 

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Vrezh Sargsyan

National Research University «MIET»

Russia, Zelenograd

E-Mail: s.vrezh@gmail.com

Memory reconfiguration for system-on-chip

yield improvement

Abstract: One of the most important issues in the design and manufacturing process of system
on-chip is the difficulty of achieving a profitable chip yield. In modern system-on-chip embedded
memories are the dominating components. System chips usually contain hundreds, and in some cases 
- thousands of different types of memory elements. And hence, overall chip yield becomes largely 
dependent on memory yield. Modern system-on-chips include dedicated built–in infrastructures 
intended for testing, diagnosis and repair of embedded memory devices. The advantages of using built–
in infrastructures are the absence of any additional external equipment and relatively low cost, as well 
as the ability to test the device by user. Memory repair is performed by disabling memory defective 
elements (row / column) and enabling redundant elements based on repair signature.

In this paper, memory array reconfiguration mechanism in described. Memory built-in self-test 

and repair infrastructure is designed, which significantly reduces the memory repair signature loading 
time.

Keywords: System-on-chip; intellectual property; embedded test and repair; yield; embedded 

memory deuce; memory reconfiguration; integrated circuit; power domain, simulation and synthesis.

Identification number of article 170TAVN214

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1.
Introduction

With the progress in the VLSI (very large scale integration) design and fabrication process, a 

complex system can now be integrated into a single chip, known as system-on-chip (SOC) [1]. Modern 
SoC’s move from logic-dominant to memory-dominant chips containing several thousands of memory 
cores, designed with the most aggressive rules and representing a significant portion of the chip area
[2-3].

The use of external tester is traditional way for memory test and repair.   However, the use of 

external equipment often constitutes as much as 40% of a chip’s overall manufacturing cost and 
provides limited repair efficiency [3-4]. Infrastructure IP is a viable solution to many issues related 
with memory test and repair process. The infrastructure IP in general is a dedicated module, which is 
separate from the functional circuitry of the IC design [5]. Examples of such infrastructure IP are Builtin-Self-Test (BIST) for logic and memories, Built-in-Self-Repair (BISR) for embedded memories, 
embedded core test logic for SoC’s. There are various solutions of BIST implementing schemes. 
Figure 1 show the composite infrastructure BIST/BISR IP [6-7].

In this paper we described memory reconfiguration signature loading mechanism and designed 

FCU (fuse control unite) module, which optimizes memory repair process.

The rest of the paper is structured as follows. In section 2 we discuss hardware components of 

embedded memory test and repair infrastructure IP and discuss reconfiguration signature delivery 
process.
In Section 3 we present a novel optimized memory reconfiguration signature loading

mechanism.  In Section 4 we bring experimental results and compare the modified circuit parameter 
with original circuit. Finally, Section 5 presents our conclusions and further perspectives.

2.
Memory reconfiguration signature delivery process

BIST/BISR infrastructure IP is hierarchical system, performing memory test, diagnosis and 

repair (see Figure 1). Each memory group communicates with the BIST Processor through the IEEE 
1500 standard compliant Intelligent Wrapper (IW) for testing and repairing the memory groups. BIST
Processor executes the test algorithms and controls the entire test and repair process. The FCU exercise 
the interconnection between IEEE 1149.1 Standard JTAG Test Access Port (TAP) and IEEE 1500 
compliant dedicated IP interface, connects chip level signals to memory groups, schedules the test 
execution and handles repair signature dataflow.
Because of FCU block manages memory 

reconfiguration signature dataflow, further we will consider peculiarities of this module.

After BIST Processor executes the test algorithm, BIST Processor collects the responses. If 

defects are found, BIST Processor determines the best way to allocate redundant resources to replace 
any defective element and generate reconfiguration data. After reconfiguration data is generated, the 
following steps of hard repair are done:

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Figure 1. Embedded memory self-test and repair infrastructure IP

1.
Repair signature transfer to permanent storage (eFUSE). The signature collected in 

MRR is transferred to FCU and programed in eFUSE boxes (see Figure 2). For complex memory 
groups, repair signature is usually long chain, and hence FCU may contain an encoding (compression)
algorithm. In such cases, repair signature is first compressed, and then programed in eFUSE boxes.

2.
After every power-up FCU reads the repair signature from eFUSE, decodes, and loads

into the MRR.

Figure 2. Repair signature dataflow, FCU module

The testing of modern memory groups need to have flexible tests such as corner conditions for 

different process, voltage, and temperature levels (PVT tests). In these types of tests the power of a 
particular memory group can be switched several times. Hence the second process, loading repair
signature to MRR, is repeated as long as the test requires power switches. The second step, itself 
consists of the following. 


Loading RSC_CHAIN (reconfiguration chain) instructions into IR (instruction register)
of all BIST processors containing repairable memories. The memory BIST processors 
containing non-repairable memories are loaded with BYPASS instruction.


Reading repair signature from eFUSE, decoding and loading MRR.

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
Loading BYPASS instruction into IR of all BIST processors, putting them into 
functional mode.

The BYPASS is IEEE1500 standard mandatory instruction [7], which puts the DUT in 

functional mode; RSC_CHAIN instruction activates MRR’s.

3.
Reconfiguration signature loading mechanism

The process described in previews chapter, have the following timing formula:

𝑇 = 𝑇(1) +  𝑇(2) + 𝑇(3)

𝑇(1)  =  𝑠𝑦𝑠𝑡𝑒𝑚_𝑟𝑠𝑐_𝑐ℎ𝑎𝑖𝑛_𝑙𝑒𝑛𝑔𝑡ℎ : is the time, which is consumed for shifting 

reconfiguration signature to MRR.

𝑇(2) = (𝑡𝑜𝑡𝑎𝑙_𝑛𝑢𝑚_𝑜𝑓_𝑓𝑢𝑠𝑒𝑠 ∗ 2)
+ 
 𝑐𝑜𝑚𝑝𝑟𝑒𝑠_𝑓𝑎𝑐𝑡𝑜𝑟 ∗ (𝑛𝑢𝑚_𝑜𝑓_𝑐𝑜𝑚𝑝𝑟_𝑒𝑙𝑠 +

 𝑛𝑢𝑚_𝑜𝑓_𝑢𝑛 𝑐𝑜𝑚𝑝𝑟_𝑒𝑙𝑠) : is the time which is consumed for reading signature from eFUSE. In our 
case, we use generic compression algorithm. The second component describes decompression process 
timing.

𝑇(3)   =  𝑛𝑢𝑚_𝑜𝑓_𝑚𝑒𝑚𝑠 ∗ 22   : is the time which is consumed for loading REC_CHAIN and 

BYPASS instructions to IR of BIST processors containing repairable memories.

We suggest using signature container in the FCU clock domain. This signature container will 

be loaded with repair signature at first BIHR (Built-In Hard-repair) run. In the next BIHR runs, the 
repair signature will be scanned out and shifted to MRR from signature container, skipping the fuse 
reading and signature decompression processes. The timing formula will be as follows:

𝑇 = 𝑇(1) +  𝑇(3)

In the Figure 3 the FCU architecture is illustrated with embedded signature container.

As it is shown, a serially connected registers and controlling logic are placed in FCU controller 

block, which is used as a container for storing reconfiguration signature (cont.).

Figure 3. Block diagram of FCU module with signature container

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4.
Experimental results

In this section, we compare the simulation and synthesis results obtained from the original and 

the modified FCU circuit. We have measured the FCU module area, as well as we calculated the repair
signature load cycles for the original circuit, and for modified circuit.

For our experiments, we used the following memory group configuration (see Table 1). The 

optimization of loading process mainly depends on memory reconfiguration chain size.

Table 1

Memory group configuration

Group
Memory configuration
Reconfiguration 

chain size

Size
Instance 

count

G1
128x640
3
72

9x512
1

G2
128x640
5
132

16x8
4

G3
128x640
4
716

99x256
6

99x256
6

Table 2

Simulation results

Project configuration
Area/ gate count
RSCR load time/ 

clock cycles

Load time saving

Without copies
8416
1320

With all copies
13168
820
37.8%

Simulation and synthesis results are shown in Table 2. As you can see from simulation results, 

the optimization of repair signature loading time has a liner dependency from overall reconfiguration 
chain size. 

Meanwhile, it is important to note, that signature container will add area overhead proportional 

to reconfiguration chain size. This kind of estimation also is useful to find best tradeoff between area 
over head and load time, allowing SoC designers beforehand  distribute appropriate memory groups. 

5.
Conclusions

Memory reconfiguration information loading mechanism is introduced. These method reduces

reconfiguration signature loading time and allows beforehand distribute memory groups, finding best 
tradeoff between reconfiguration signature load time and BIST circuit area overhead. However, there
are some limitation and shortcomings. One of them is the area overhead which is proportional to MRR 
size. Another one is the limitation of memory group bypassing mechanism, in first cycle of delivery 
process. Further investigation is focused on finding ways of having selectable containers.

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REFERENCES

1.
Gupta, R. K. and Zorian, Y. “Introducing Core-Based System Design,” IEEE Design & 
Test of Computers, 14(4), pp 15-25, (1997).

2.
Zorian, Y. Marinissen, E. and Dey, S. “Testing Embedded-Core-based System Chips,” 
Proceedings of the International Test Conference (ITC), pp 130-143, (1998).

3.
A. Allan et al., “2001 Technology Roadmap for Semiconductors,” Computer, vol. 35, 
no.1, Jan. 2002, pp. 42-53.

4.
Y. Zorian, “Embedded memory test and repair: Infrastructure IP for SoC yield,” in Proc. 
ITC, Oct. 2002, pp. 340–349

5.
J. Dreibelbis, J. Barth, H. Kalter, and R. Kho. Processor based built-in self-test for 
embedded DRAM. IEEE Journal of Solid-State Circuits, pages 1731-1740, Nov. 1998.

6.
Y. Zorian, “Guest Editor Introduction: What is Infrastructure IP?”, IEEE Design and 
Test of Computers, vol. 19, no. 3, May-June 2002, pp. 5-7.

7.
IEEE 1500 Web Site. http://grouper.ieee.org/groups/1500/

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УДК 004.031.6, 004.31

Саргсян Вреж Каренович

Национальный исследовательский университет «МИЭТ»

Россия, Зеленоград1

Аспирант кафедры ПКИМС

E-Mail: s.vrezh@gmail.com

Реконфигурация памяти для повышения процента

выхода годных систем-на-кристалле

Аннотация: Одним из важнейших вопросов в проектировании и процессе производства

систем-на-кристалле является сложность достижения прибыльного уровеня выхода годных 
микросхем. В современных системах на кристалле доминирующими компонентоми являются 
встроенные устройства памяти. Системныe чипы содержат, как правило, сотни, а в некоторых 
случаях — тысячи элементов памяти различных типов. Следовательно, процент выхода годных 
микросхем становится в значительной степени зависимым от процента выхода годных 
устройств памяти. Современные системы-на-кристалле включают в себя специальные 
встроенные инфраструктуры, предназначенные для тестирования, диагностирования и ремонта 
устройств
памяти. 
Преимуществами 
использования 
встроенных
инфраструктур 

самотестирования являются отсутствие необходимости использования какого-либо внешнего 
дополнительного оборудования и относительно небольшая стоимость, а также возможность 
тестирования устройства конечным пользователем. Ремонт памяти осуществляется путем 
отключения дефектных элементов(строк и/ столбцов) и подключения резервных элементов на 
основе сигнатуры по восстановлению.

В данной статье описан механизм реконфигурации матрицы памяти и реализована 

встроенная  инфраструктура самотестирования  и ремонта памяти, которая значительно 
сокращает время загрузки сигнатуры по восстановлению работоспособности памяти.

Ключевые слова: Система-на-кристалле; сложнофункциональный блок; встроенное 

тестирование и ремонт;
процент выхода годных;
встроенное устройство памяти;

реконфигурация памяти; интегральная схема; домен питания; моделирование и синтез.

Идентификационный номер статьи в журнале 170TAVN214

1 124498, Москва, Зеленоград, проезд 4806, дом 5.

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ЛИТЕРАТУРА

1.
Р. К. Гупта и Е. Зорян, “Introducing Core-Based System Design,” IEEE Design & 
Test of Computers, 14(4), ст 15-25, (1997).

2.
Е. Зорян, Е. Мариниссен и С. Дей, “Testing Embedded-Core-based System Chips,” 
Proceedings of the International Test Conference (ITC), ст. 130-143, (1998).

3.
А. Аллан , “2001 Technology Roadmap for Semiconductors,” Computer, том. 35, № 
1, 2002, ст. 42-53.

4.
Е. Зорян, “Embedded memory test and repair: Infrastructure IP for SoC yield,” in Proc. 
ITC, Окт. 2002, ст. 340–349

5.
Дж. Дреибелбис, Дж. Бартх, Х. Калтер, и Р. Кхо. “Processor based built-in self-test 
for embedded DRAM”, IEEE Journal of Solid-State Circuits, ст. 1731-1740, Ноябрь
1998.

6.
Е. Зорян, “Guest Editor Introduction: What is Infrastructure IP?”, IEEE Design and 
Test of Computers, том. 19, № 3, May-June 2002, ст. 5-7.

7.
Домашняя страница  IEEE 1500 http://grouper.ieee.org/groups/1500/

Рецензат: Шукурян Самвел Кимович, д.ф.-м.н., профессор, действительный член 

Национальной Академии наук Республики Армения, старший управляющий
отдела 

вложенного 
тестирования 
и 
ремонта 
компании 
«Синопсис», 

Samvel.Shoukourian@synopsys.com